very large-scale integration(vlsi)中文是什么意思

發(fā)音:

中文翻譯
造句

極大績(jī)體電路器

very n. 維利〔姓氏〕。
large adj. 1.(體積，空間，數(shù)量，規(guī)模等)大的，巨大的； ...
scale scale3 n. 1.鱗〔有時(shí)也用作集合詞 ...
integration n. 1.結(jié)合；綜合；一體化。 2.【心理學(xué)】整合(作用 ...
very large scale integration (vlsi) 超大規(guī)模集成電路
vlsi very large scale integration 超集成; 甚大規(guī)模集成電路
vlsi，very large scale integration 超大規(guī)模集成電路
very large scale integration 超大規(guī)模集成電路; 超大規(guī)模集成化
very large-scale integration 超大規(guī)模集成; 甚大規(guī)模集成電路
very-large-scale integration 超大規(guī)模集成
vlsi very large scale integrated circuit 超大規(guī)模集成電路
very large scale integration research 超大枧模集成技術(shù)研究所
extra large scale integration 超大規(guī)模集成; 特大規(guī)模集成
large scale compound integration 大規(guī)模混合集成電路; 大規(guī)模組合集成電路
large scale hybrid integration 大規(guī)模混合集成電路
large scale integration 大規(guī)模集成電路; 大規(guī)模集成化
large scale integration circuit 大規(guī)模集成電路
large scale integration hybrid 大規(guī)模混合集成電路
large scale integration level 大規(guī)模集成度
large scale integration microprocessor 大規(guī)模集成微處理機(jī)
large-scale compound integration 大規(guī)模混合集成; 大規(guī)模組合集成電路
large-scale integration 大規(guī)模集成電路; 大規(guī)模集成化
large-scale integration (lsi) 大型積體電路
large-scale integration circuit 大規(guī)模集成電路
large-scale integration technology 大規(guī)模集成技術(shù)

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例句與用法

As the density of very large - scale integration ( vlsi ) chips increases , the probability of introducing defects on the chips during the fabrication process also increase
隨著超大規(guī)模集成電路芯片生產(chǎn)技術(shù)的發(fā)展，單片芯片的集成度越來(lái)越高。要想一次生產(chǎn)出沒(méi)有任何缺陷的芯片已不太可能。
Especially , mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore , it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半絕緣gaas為襯底的金屬半導(dǎo)體場(chǎng)效應(yīng)晶體管( mesfet )器件是超大規(guī)模集成電路和單片微波集成電路廣泛采用的器件結(jié)構(gòu)，因此研究lec法生長(zhǎng)si - gaas ( lecsi - gaas )襯底材料特性對(duì)mesfet器件性能的影響，對(duì)gaas集成電路和相關(guān)器件的設(shè)計(jì)及制造是非常必要的。

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